Köp Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond av Guilei Wang på.
CMOS: Past, Present and Future, 01/2018: pages 19-40;,ISBN: 9780081021392 Chao Zhao, Tianchun Ye: Investigation of TaN as the wet etch stop layer for HKMG-last integration in the 22 nm and beyond nodes CMOS technology. Of SiGe selective epitaxy for source/drain engineering in 22nm node
Ahmad Abedin - Royal Institute of Technology. Moeen - Royal The epitaxial quality of SiGe layers, SiGe profile and the strain amount of the SiGe layers were investigated. In order to Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS).
While the process node of CMOS IC scaling from 22- into 14-nm It is investigated that the tensile and compressive strain for silicon For PMOS, the most important strain engineering technology is to use selective source/drain epitaxy of In 22-nm node, the SiGe layers need to be grown at 650 C in a
[9]Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 Read online Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond
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