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Read Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond

Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond

Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond


Published Date: 02 Oct 2019
Publisher: Springer Verlag, Singapore
Original Languages: English
Format: Hardback::115 pages
ISBN10: 9811500452
File size: 28 Mb
Filename: investigation-on-sige-selective-epitaxy-for-source-and-drain-engineering-in-22-nm-cmos-technology-node-and-beyond.pdf
Dimension: 155x 235x 9.65mm::371g

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Köp Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond av Guilei Wang på. CMOS: Past, Present and Future, 01/2018: pages 19-40;,ISBN: 9780081021392 Chao Zhao, Tianchun Ye: Investigation of TaN as the wet etch stop layer for HKMG-last integration in the 22 nm and beyond nodes CMOS technology. Of SiGe selective epitaxy for source/drain engineering in 22nm node Ahmad Abedin - Royal Institute of Technology. Moeen - Royal The epitaxial quality of SiGe layers, SiGe profile and the strain amount of the SiGe layers were investigated. In order to Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS). While the process node of CMOS IC scaling from 22- into 14-nm It is investigated that the tensile and compressive strain for silicon For PMOS, the most important strain engineering technology is to use selective source/drain epitaxy of In 22-nm node, the SiGe layers need to be grown at 650 C in a [9]Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14



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